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M08100 - SEMI M81 - 単結晶シリコンカーバイド基板に存在する欠陥についてのガイド StdPbc-0915 本スタンダードは,300 mm半導体プロセス装置に提供される真空ポンプに適用される。

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Description

本スタンダードは,300 mm半導体プロセス装置に提供される真空ポンプに適用される。

This Document specifies how sensor/actuator/controller devices interoperate on the network specific for the MECHATROLINK Public specification referenced in § 4

1  The specification for epitaxial silicon wafers for discrete semiconductor device manufacture is specifically directed to silicon homoepitaxial deposits thicker than 25 µm on homogeneous silicon substrates or similar epitaxial wafers that are to be used to make discrete devices

To promote common understanding and correct communication between suppliers and customers and others in the field

M08100 - SEMI M81 - 単結晶シリコンカーバイド基板に存在する欠陥についてのガイド StdPbc-0915 本スタンダードは,300 mm半導体プロセス装置に提供される真空ポンプに適用される。NOTICE: This translation is a REFERENCE COPY ONLY. If differences should exist between the English version and a translation in any other language, the English version is the official and authoritative version. SEMI SEMI Compound Semiconductor Materials Global Technical Committee2011513global Audits and Reviews Subcommittee20116www. semiviews. org www. semi. org SEMI M55 SiCSiC SiC Referenced SEMI Standards SEMI M55 Specification for Polished

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